156*156 ployCrystalline Wafer

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156*156 ployCrystalline Wafer
Posting date : Jul 23, 2010
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85-
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Material: multicrystalline silicon Growth Method: Casting Type/ dopant: P-type/ Boron doped Resistivity: 0.5 – 3.0 Wcm Oxygen content:£ 1.0 x 1018 atoms/cm3 Carbon content:£ 5.0 x 1016 atoms/cm3 Effective life time:3 2 microsecond Side size:square 156 mm ± 0.5 mm Side Angle:90° ± 0.25° Wafer thickness:200 μm ± 20 μm and thicker Bow:£ 75 μm TTV:£ 50 μm Saw damage:£ 15 μm Surface:as cut, clean, free from stains, no cracks Diameter:219.21±1.0mm Crack and Pinhole:No cracks and pinholes visible with naked eyes Edge Defect:Depth<1mm, Length<1.5mm,less than 2 places Corner Defect:Depth<1.5mm, Length<1.5mm, less than 2 places Bevel edge angle:45 ± 10?

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