Gallium Arsenide (GaAs) Wafer Si-Doped 2” 3”

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Gallium Arsenide (GaAs) Wafer Si-Doped 2” 3”
Posting date : Oct 18, 2013
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83-
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Gallium Arsenide (GaAs) Wafer Si-Doped 2” 3” Conduct Type S-C-N , VGF growth, EPI-Ready Diameter Ø50.7 ± 0.2 Orientation (100)0±0.50 Thickness 350±25um, 625±25um Primary Flat EJ [0 -1 -1] ±0.50 Length 16+/-1mm, 22+/-2 mm Secondary Flat EJ [0 1 -1] ±0.50 Length 8+/-1mm,16+/-2mm Carrier Concentration 0.4E18-4E18 /cm3for 2”, 1-2.0×1017 for 3” Resistivity 0.8E-3~ 9E-3 Ohm.cm for 3”, 0.05-0.005 Ohm.cm for 3” Mobility>1000 cm2/v.s for 2”, 2000-3500 cm2/v.s for 3” EPD ≤ 1000/cm2 for 2”, ≤ 10,000/cm2 for 3” Surface P/E , TTV≤10µm Particle Count <50 (>0.3µm)

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