NTJD5121NT1G High-performance Mosfet Array
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United States [US] The onsemi NTJD5121NT1G is a high-performance N-channel Trans MOSFET designed for demanding power management applications. It features ON Semiconductor's leading edge trench technology, which provides low RDS(on) and improved efficiency. The device has a low gate threshold, minimizing power consumption and reducing parasitic capacitance. With an operating voltage of 60V and current rating of 0.295A, the NTJD5121NT1G is suitable for a range of applications including consumer electronics, smart grids, HVAC controls, and industrial automation. Its compact SOT-363 package offers superior flexibility and reduced PCB space requirements. The device also features an ESD protected gate to withstand harsh environmental conditions and meets AEC-Q101 qualifications for automotive industry requirements. This highly reliable component is designed to minimize system-level power losses, making it an ideal choice for applications where power efficiency and reliability are critical.
Features
According to the product information, the features of NTJD5121NT1G are:
Leading Edge Trench Technology for Low RDS(on)
Low Gate Threshold
Low Input Capacitance
ESD Protected Gate
AEC-Q101 Qualified
These features make it suitable for various applications such as consumer electronics, HVAC controls, smart grids, and more.
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