2 Inch 6H - Semi Silicon Carbide Wafer Low Power Consumption For Detector

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2inch 6H-Semi sic wafer ,customized sic substrates , 2inch 6H-N sic wafers , sic crystal ingots ,Silicon Carbide Wafer About Silicon Carbide SiC crystal # # Advantagement # Low lattice mismatch # High thermal conductivity # Low power consumption # Excellent transient characteristics # High band gap Application areas # 1 high frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN, # diodes, IGBT, MOSFET # 2 optoelectronic devices: mainly used in GaN/SiC blue LED substrate material (GaN/SiC) LED SILICON CARBIDE MATERIAL PROPERTIES - - - - Property | 4H-SiC, Single Crystal | 6H-SiC, Single Crystal | Lattice Parameters | a=3.076 c=10.053 | a=3.073 c=15.117 | Stacking Sequence | ABCB | ABCACB | Mohs Hardness | 9.2 | 9.2 | Density | 3.21 g/cm3 | 3.21 g/cm3 | Therm. Expansion Coefficient | 4-510-6/K | 4-510-6/K | Refraction Index @750nm | no = 2.61 ne = 2.66 | no = 2.60 ne = 2.65 | Dielectric Constant | c~9.66 | c~9.66 | Thermal Conductivity (N-type, 0.02 ohm.cm) | a~4.2 W/cmK@298K c~3.7 W/cmK@298K | | Thermal Conductivity (Semi-insulating) | a~4.9 W/cmK@298K c~3.9 W/cmK@298K | a~4.6 W/cmK@298K c~3.2 W/cmK@298K | Band-gap | 3.23 eV | 3.02 eV | Break-Down Electrical Field | 3-5106V/cm | 3-5106V/cm | Saturation Drift Velocity | 2.0105m/s | 2.0105m/s | - - - - Standard spec. - - - - 2inch diameter Silicon Carbide (SiC) Substrate Specification | | Grade | Zero MPD Grade | Production Grade | Research Grade | Dummy Grade | | | Diameter | 50.8 mm0.2mm | | | Thickness | 330 m25m or 43025um | | | Wafer Orientation | Off axis : 4.0 toward <1120> 0.5 for 4H-N/4H-SI On axis : <0001>0.5 for 6H-N/6H-SI/4H-N/4H-SI | | | Micropipe Density | 0 cm-2 | 5 cm-2 | 15 cm-2 | 100 cm-2 | | | Resistivity | 4H-N | 0.015~0.028 cm | | | 6H-N | 0.02~0.1 cm | | | 4/6H-SI | 1E5 cm | | | Primary Flat | {10-10}5.0 | | | Primary Flat Length | 18.5 mm2.0 mm | | | Secondary Flat Length | 10.0mm2.0 mm | | | Secondary Flat Orientation | Silicon face up: 90 CW. from Prime flat 5.0 | | | Edge exclusion | 1 mm | | | TTV/Bow /Warp | 10m /10m /15m | | | Roughness | Polish Ra1 nm | | | CMP Ra0.5 nm | | | Cracks by high intensity light | None | 1 allowed, 2 mm | Cumulative length 10mm, single length2mm | | | | Hex Plates by high intensity light | Cumulative area 1% | Cumulative area 1% | Cumulative area 3% | | | Polytype Areas by high intensity light | None | Cumulative area 2% | Cumulative area 5% | | | | Scratches by high intensity light | 3 scratches to 1wafer diameter cumulative length | 5 scratches to 1wafer diameter cumulative length | 5 scratches to 1wafer diameter cumulative length | | | | edge chip | None | 3 allowed, 0.5 mm each | 5 allowed, 1 mm each | | | - - - - ZMKJ canprovides high quality single crystal SiC wafer ( Silicon Carbide ) to electronic and optoelectronic industry . SiC wafer is a next generation semiconductor material , with unique electrical properties and excellent thermal properties , compared to silicon wafer and GaAs wafer , SiC wafer is more suitable for high temperature and high power device application . SiC wafer can be supplied in diameter 2-6 inch , both 4H and 6H SiC , N-type , Nitrogen doped , and semi-insulating type available . Please contact us for more product information . Packing and Delivery >Packaging Logistcs we concerns each details of the package , cleaning, anti-static , shock treatment . According to the quantity and shape of the product , we will take a different packaging process! Almost by singlewafer cassettes or 25pcs cassette in 100 grade cleaning room.

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SHANGHAI FAMOUS TRADE CO.,LTD

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