Nd:YVO4 Crystal
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China [CN] |
Nd dopant:
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0.27%, 0.3%, 0.4%, 0.5%, 0.7%, 1.0%, 2.0%, 3.0%
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Width x Height:
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1x1 ~ 16x16mm
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Length:
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0.02 ~ 20mm
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Orientation:
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-cut( ± 0.5° )
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Dimensional Tolerance:
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+/-0.1mm
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Wavefront Distortion:
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<λ/8 at 633nm
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Surface Quality:
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20/10
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Parallelism:
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< 10 arc seconds
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Perpendicularity:
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< 5 arc minutes
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Surface Flatness:
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<λ/10 at 632.8nm
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Clear Aperture:
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Central 95%
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Chamfer:
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0.15x45°
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Coating:
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1.AR@1064nm R<0.1%2.AR@1064nm R< 0.1% & HT@808nm T>95%3.HR@1064nm R>99.8% & HR@532nm R>99% & HT@808nm T>95%
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Atomic Density
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~1.37x1020 atoms/cm2
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Crystal Structure
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Zircon Tetragonal, space group D4h, a=b=7.12, c=6.29
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Density
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4.22 g/cm3
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Mohs Hardness
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Glass-like, ~5
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Thermal Expansion Coefficient
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aa=4.43x10-6/K, ac=11.37x10-6/K
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Thermal Conductivity Coefficient
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||C: 5.23 W/m/K; ^C: 5.10 W/m/K
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Lasing Wavelengths
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914nm, 1064 nm, 1342 nm
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Crystal Class
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positive uniaxial, no=na=nb ne=ncno=1.9573, ne=2.1652, @ 1064nmno=1.9721, ne=2.1858, @ 808nmno=2.0210, ne=2.2560, @ 532nm
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Thermal Optical Coefficient
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dna/dT=8.5x10-6/K, dnc/dT=3.0x10-6/K
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Stimulated Emission Cross-Section
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25.0x10-19 cm2 , @1064 nm
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Fluorescent Lifetime
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90 ms (about 50 ms for 2 atm% Nd doped) @ 808 nm
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Absorption Coefficient
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31.4 cm-1 @ 808 nm
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Absorption Length
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0.32 mm @ 808 nm
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Intrinsic Loss
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Less 0.1% cm-1 , @1064 nm
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Gain Bandwidth
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0.96 nm (257 GHz) @ 1064 nm
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Polarized Laser Emission
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p parallel to optic axis (c-axis)
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Diode Pumped Optical to Optical Efficiency
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> 60%
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