Single Crystal Silicon EPI Wafer 4" 6" 8" at Western Minmetals (SC) Corporation

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Home > Product > Single Crystal Silicon EPI Wafer 4" 6" 8" at Western Minmetals (SC) Corporation
Product
Single Crystal Silicon EPI Wafer 4" 6" 8" at Western Minmetals (SC) Co...
Posting date : Dec 27, 2017
Membership
Free Member Scince Dec 26, 2017
FOB Price
1-100USD/pc
Min. Order Quantity
500pcs
Supply Abillity
10000-15000pcs/month
Port
China
Payment Terms
TT in advance
Package
in foam box or cassette, carton box outside
Keyword :
Category
Contact
Tony Fu
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Product Detail
Company Info
 
Quick Detail
Place of Origin
China [CN]
Brand Name
WMC
HS-CODE
3818-00
Package & Delivery Lead Time
Package
in foam box or cassette, carton box outside
Detailed Description
Single Crystal Silicon EPI Wafer 4" 6" 8" at Western Minmetals (SC) Corporation
Diameter: 4" 6" 8"
Substrate Layer
Growth Method: CZ MCZ FZ
Dopant: Boron / Phosphorus
Conductivity Type: P / N
Crystal Orientation: <100> <111>
Thickness: 510-540um
Resistivity: 0.006-0.0075 ohm.cm
Primary Length: 40-45mm
TTV: 10% max, Bow: 30% max, Warp: 30% max
EPD: 100ea/cm2 max
Epitaxy Layer
Conductivity: N type or P type
Crystal Orientation: <100> <111> +/-0.5degree
Resistivity: 0.1-200 Ohm.cm
RRV: 3% max
Resistivity Uniformity: 3% max
Standard Thickness: 1-100um
TTV: 5% max
Thickness Uniformity: 3% max
Stacking Faults: 50 ea/cm2 max
EPD: 100 ea/cm2 max
Packing Method: in form box or cassette, carton box outside
Application: widely serving the producing or development of Discrete, Si BiCMOS Devices, Si Bipolar Devices, IGBT, Si CMOS Devices, Si Power Devices and SOI, 6"8" are available.

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